| Item |  | MOSFET |
| Description | | 2300−2400 MHz, 45W AVG., 28 V. RF Power LDMOS Transistor. N−Channel Enhancement−Mode Lateral MOSFET |
| Vendor | | NXP |
| D/C | | n/a |
| Part No. | | AFT23H200-4S2L  |
| Q'ty | | 30 EA |
| Remark | | taping |
RF Power LDMOS Transistor.
N−Channel Enhancement−Mode Lateral MOSFET
2300−2400 MHz, 45W AVG., 28 V.
AFT23H200-4S2L
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